PHT6N06T, PHT6NQ10T, PHT8N06 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:05+ D/C:04/07+
PHT6N06T, PHT6NQ10T, PHT8N06 Datasheet download
Part Number: PHT6N06T
MFG: PHILIPS
Package Cooled: 05+
D/C: 04/07+
MFG:PHILIPS Package Cooled:05+ D/C:04/07+
PHT6N06T, PHT6NQ10T, PHT8N06 Datasheet download
MFG: PHILIPS
Package Cooled: 05+
D/C: 04/07+
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PDF/DataSheet Download
Datasheet: PHT6N06T
File Size: 73006 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHT6NQ10T
File Size: 80444 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHT8N06
File Size: 73999 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC-DC converters and general purpose switching applications.
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | - | 100 | V | |
VDGR | Drain-gate voltage | RGS = 20 k | - | 100 | V |
VGS | Gate-source voltage | - | - | ± 20 | V |
ID | Continuous drain current (dc) | Tsp = 25 °C Tamb = 25 °C | - | 6.5 3 | A A |
ID | Continuous drain current (dc) | Tsp = 100 °C Tamb =100 °C | - | 4.1 1.9 | A A |
IDM | Pulsed drain current |
- | 26 | A | |
PD | Total power dissipation | Tsp = 25 °C Tamb=25 °C | - | 8.3 1.8 | W W |
Tj Tstg | operating temperature and Storage temperature | -55 | 150 | °C |
• 'Trench' technology
• Low on-state resistance
• Fast switching
• Low thermal resistance