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PHT1008CF, PHT11N06, PHT11N06LT

PHT1008CF, PHT11N06, PHT11N06LT Selling Leads, Datasheet

MFG:N/A  Package Cooled:NA/  D/C:06+

PHT1008CF, PHT11N06, PHT11N06LT Picture

PHT1008CF, PHT11N06, PHT11N06LT Datasheet download

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Part Number: PHT1008CF

 

MFG: N/A

Package Cooled: NA/

D/C: 06+

 

 

 
 
 
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About PHT11N06

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Datasheet: PHT11N06

File Size: 77156 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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About PHT11N06

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Datasheet: PHT11N06

File Size: 77156 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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About PHT11N06LT

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Datasheet: PHT11N06LT

File Size: 70821 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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PHT11N06LT General Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC-DC converters and general purpose switching applications.

PHT11N06LT Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 55 V
VDGR Drain-gate voltage RGS = 20 k - 55 V
±VGS Gate-source voltage - - 13 V
ID Drain current (DC) Tsp = 25 °C Tamb = 25 °C - 10.7 4.9 A A
ID Drain current (DC) Tsp = 100 °C Tamb = 100°C - 7.5 3.4 A A
IDM Drain current (pulse peak value) Tsp = 25 °C Tamb = 25 °C - 42 19 A A
Ptot Total power dissipation Tsp = 25 °C Tamb = 25 °C - 8.3 1.8 W w
Tstg, Tj Storage & operating temperature - -55 150 °C

PHT11N06LT Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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