PHT15016, PHT15016CF, PHT1N52S Selling Leads, Datasheet
MFG:NIEC Package Cooled:55 D/C:MODULE
PHT15016, PHT15016CF, PHT1N52S Datasheet download
Part Number: PHT15016
MFG: NIEC
Package Cooled: 55
D/C: MODULE
MFG:NIEC Package Cooled:55 D/C:MODULE
PHT15016, PHT15016CF, PHT1N52S Datasheet download
MFG: NIEC
Package Cooled: 55
D/C: MODULE
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PDF/DataSheet Download
Datasheet: PHT11N06
File Size: 77156 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHT11N06
File Size: 77156 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHT1N52S
File Size: 28250 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights (CFL) and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | - | 520 | V | |
VDGR | Drain-gate voltage | RGS = 20 k | - | 520 | V |
±VGS | Gate-source voltage | - | - | 30 | V |
ID | Drain current (DC) | Tsp = 25 °C Tsp = 100 °C | - | 0.6 0.5 | A A |
IDM | Drain current (pulse peak value) | Tsp = 25 °C | - | 2.4 | A |
IDR | Source-drain diode current (DC) |
Tsp = 25 °C | - | 0.6 | A |
IDRM | Source-drain diode current (pulse peak value) | Tsp = 25 °C | 2.4 | A | |
Ptot | Total power dissipation | Tsp = 25 °C | - | 1.8 | W |
Tstg | Storage temperature | -55 | 150 | °C | |
Tj | operating temperature | - | - | 150 | °C |
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so