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PHT15016, PHT15016CF, PHT1N52S

PHT15016, PHT15016CF, PHT1N52S Selling Leads, Datasheet

MFG:NIEC   Package Cooled:55  D/C:MODULE

PHT15016, PHT15016CF, PHT1N52S Picture

PHT15016, PHT15016CF, PHT1N52S Datasheet download

Five Points

Part Number: PHT15016

 

MFG: NIEC

Package Cooled: 55

D/C: MODULE

 

 

 
 
 
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About PHT11N06

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Datasheet: PHT11N06

File Size: 77156 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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About PHT11N06

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Datasheet: PHT11N06

File Size: 77156 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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About PHT1N52S

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Datasheet: PHT1N52S

File Size: 28250 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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PHT1N52S General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking  voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights (CFL) and general purpose switching applications.

PHT1N52S Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage   - 520 V
VDGR Drain-gate voltage RGS = 20 k - 520 V
±VGS Gate-source voltage - - 30 V
ID Drain current (DC) Tsp = 25 °C Tsp = 100 °C - 0.6 0.5 A A
IDM Drain current (pulse peak value) Tsp = 25 °C - 2.4 A
IDR Source-drain diode current (DC)
Tsp = 25 °C - 0.6 A
IDRM Source-drain diode current (pulse peak value) Tsp = 25 °C   2.4 A
Ptot Total power dissipation Tsp = 25 °C - 1.8 W
Tstg Storage temperature   -55 150 °C
Tj operating temperature - - 150 °C

PHT1N52S Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so

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