ApplicationThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and ...
PHT1N60R: ApplicationThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips...
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ApplicationThese products are not designed for use in life support appliances, devices or systems ...
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | - | 600 | V | |
VDGR | Drain-gate voltage | RGS = 20 k | - | 600 | V |
±VGS | Gate-source voltage | - | - | 30 | V |
ID | Drain current (DC) | Tsp = 25 °C Tsp = 100 °C | - | 5.3 0.4 | A A |
IDM | Drain current (pulse peak value) | Tsp = 25 °C | - | 2.12 | A |
IDR | Source-drain diode current (DC) |
Tsp = 25 °C | - | 0.53 | A |
IDRM | Source-drain diode current (pulse peak value) | Tsp = 25 °C | 2.12 | A | |
Ptot | Total power dissipation | Tsp = 25 °C | - | 1.8 | W |
Tstg | Storage temperature | -55 | 150 | °C | |
Tj | operating temperature | - | - | 150 | °C |
PHT1N60R N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surfacemounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights (CFL) and general purpose switching applications.