PHT11N06LT,135

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 55 V
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 10.7 A
Resistance Drain-Source RDS (on) : 40 mOhms at 5 V
Gate-Source Breakdown Voltage : +/- 13 V


Parameters:

Technical/Catalog Information	PHT11N06LT,135
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	10.7A
Rds On (Max) @ Id, Vgs	40 mOhm @ 5A, 5V
Input Capacitance (Ciss) @ Vds	1400pF @ 25V
Power - Max	8.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Drawing Number	568; SOT223; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PHT11N06LT,135 PHT11N06LT,135