PHT1N52R

PHT1N52R N-channel enchancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage,fast switching and high thermal cycling performance. Intended for use in compact fluorescent lights(CFL) and general purpose switching applications.

There are some limiting values of PHT1N52R (limiting values in accordance with the absolute maximum system).Drain-source voltage(V_DS) is 520 V max.Drain-gate voltage(V_DGR) is 520 V when R_GS is 20 k. Gate-source voltage is ±30 V. Drian current(DC)(I_D) is 0.46 A when Tsp is 25 or is 4.9 A when Tamb is 25.Drain current(pulse peak value)(I_DM) is 3.2 A when Tsp is 25.Total power dissipation(Ptot) is 8.3 W when Tsp is 25. Storage temperature(Tj) is -55 to 150.Otherwise, there are also some thermal resistances about it.Thermal resistance junction to solder point is 15 k/W max. Thermal resistance junction to ambient is 156 K/W typ or 70 K/W typ.Electrical characteristics: Drain-source breakdwon voltage(V_(BR)DSS) is 520 V min when V_GS is 0V, ID is 0.25 mA. Gate threshold voltage (V_GS(TO) ) is 2.0 Vmin,3.0 V typ and 4.0 V max when V_DS is V_GS, I_D is 0.25 mA. Gate-source leakage current(I_GSS) is 4 nA typ and 100 nA max when V_GS is ±35 V,V_DS is 0V.Drain-source on-state resistance(R_DS(ON) ) is 12 typ and 16 max  when VGS is 10 V ,I_D is 1 A. Total gate charge is 5 nC typ when V_DS is 400 V , V_GS is 10 V,I_D is 2 A .Gate to source charge is .5 nC typ when V_DS is 400 V , V_GS is 10 V,I_D is 2 A.

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