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PHT1N52S

ApplicationThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do soSpecifications SYM...

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SeekIC No. : 004460706 Detail

PHT1N52S: ApplicationThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips...

PHT1N52S Data Sheet

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Part Number:
PHT1N52S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/26

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Product Details

Description



Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage   - 520 V
VDGR Drain-gate voltage RGS = 20 k - 520 V
±VGS Gate-source voltage - - 30 V
ID Drain current (DC) Tsp = 25 °C Tsp = 100 °C - 0.6 0.5 A A
IDM Drain current (pulse peak value) Tsp = 25 °C - 2.4 A
IDR Source-drain diode current (DC)
 Tsp = 25 °C - 0.6 A
IDRM Source-drain diode current (pulse peak value) Tsp = 25 °C   2.4 A
Ptot Total power dissipation Tsp = 25 °C - 1.8 W
Tstg Storage temperature   -55 150 °C
Tj operating temperature - - 150 °C



Description

PHT1N52S N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking  voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights (CFL) and general purpose switching applications.




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