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PHT1N60R, PHT25012, PHT25015

PHT1N60R, PHT25012, PHT25015 Selling Leads, Datasheet

MFG:PHILIPS  Package Cooled:SOT-223  D/C:2006

PHT1N60R, PHT25012, PHT25015 Picture

PHT1N60R, PHT25012, PHT25015 Datasheet download

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Part Number: PHT1N60R

 

MFG: PHILIPS

Package Cooled: SOT-223

D/C: 2006

 

 

 
 
 
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About PHT1N60R

PDF/DataSheet Download

Datasheet: PHT1N60R

File Size: 31074 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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About PHT25012

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Datasheet: PHT25012

File Size: 248598 KB

Manufacturer: NIEC [Nihon Inter Electronics Corporation]

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About PHT11N06

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Datasheet: PHT11N06

File Size: 77156 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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PHT1N60R General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surfacemounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights (CFL) and general purpose switching applications.

PHT1N60R Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage   - 600 V
VDGR Drain-gate voltage RGS = 20 k - 600 V
±VGS Gate-source voltage - - 30 V
ID Drain current (DC) Tsp = 25 °C Tsp = 100 °C - 5.3 0.4 A A
IDM Drain current (pulse peak value) Tsp = 25 °C - 2.12 A
IDR Source-drain diode current (DC)
Tsp = 25 °C - 0.53 A
IDRM Source-drain diode current (pulse peak value) Tsp = 25 °C   2.12 A
Ptot Total power dissipation Tsp = 25 °C - 1.8 W
Tstg Storage temperature   -55 150 °C
Tj operating temperature - - 150 °C

PHT1N60R Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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