PHB2006, PHB2006GTR, PHB20N06T Selling Leads, Datasheet
MFG:IR Package Cooled:Module D/C:06+
PHB2006, PHB2006GTR, PHB20N06T Datasheet download
Part Number: PHB2006
MFG: IR
Package Cooled: Module
D/C: 06+
PHB2006, PHB2006GTR, PHB20N06T
- Table of contents:
Info of PHB2006
Info of PHB2006GTR
Info of PHB20N06T
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About PHB100N03LT
PDF/DataSheet Download
Datasheet: PHB100N03LT
File Size: 339176 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB100N03LT
PDF/DataSheet Download
Datasheet: PHB100N03LT
File Size: 339176 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB20N06T
PDF/DataSheet Download
Datasheet: PHB20N06T
File Size: 342233 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB20N06T General Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability:
PHP20N06T in SOT78 (TO-220AB)
PHB20N06T in SOT404 (D 2-PAK).
Product availability:
PHP20N06T in SOT78 (TO-220AB)
PHB20N06T in SOT404 (D 2-PAK).
PHB20N06T Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | - | 55 | V | |
| VDGR | drain-gate voltage (DC) | RGS = 20 k | - | 55 | V |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 20.3 | A |
| Tmb = 100 ; VGS = 10 V; Figure 2 | - | 14.3 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 81 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 62 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | operating junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IDR | reverse drain current (DC) | Tmb = 25 | - | 20.3 | A |
| IDRM | pulsed reverse drain current | Tmb = 25 ; pulsed; tp 10 s | - | 81 | A |
| Avalanche ruggedness | |||||
| WDSS | non-repetitive avalanche energy |
unclamped inductive load; ID = 11 A; VDS 55 V;VGS = 10 V; RGS = 50 ; starting Tj = 25 |
- | 30.3 | mJ |
PHB20N06T Features
·Very low on-state resistance
·Fast switching.
·Fast switching.
PHB20N06T Typical Application
·Switched mode power supplies
·DC to DC converters.
·DC to DC converters.
PHB20N06T Connection Diagram
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