PHB125N06LT, PHB125N06T, PHB129NQ04LT Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:. D/C:05+/06+
PHB125N06LT, PHB125N06T, PHB129NQ04LT Datasheet download
Part Number: PHB125N06LT
MFG: PHILIPS
Package Cooled: .
D/C: 05+/06+
MFG:PHILIPS Package Cooled:. D/C:05+/06+
PHB125N06LT, PHB125N06T, PHB129NQ04LT Datasheet download
MFG: PHILIPS
Package Cooled: .
D/C: 05+/06+
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PDF/DataSheet Download
Datasheet: PHB125N06LT
File Size: 73481 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHB125N06T
File Size: 69599 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHB129NQ04LT
File Size: 98445 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage a Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 kW Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
55 55 ± 13 75 75 240 250 175 |
V V V A A A W |
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj |
Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC)1 Drain current (DC)1 Drain current (pulse peak value) Total power dissipation Storage & operating temperature |
- RGS = 20 k - Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 - |
- - - - - - - - 55 |
55 55 20 75 75 240 250 175 |
V V V A A A W |
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | 25 Tj 175 | - | 40 | V |
VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 40 | V |
VGS | gate-source voltage (DC) | - | ±15 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
Tmb = 100 ; VGS = 10 V; Figure 2 | - | 75 | A | ||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 200 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IS | source (diode forward) current (DC) Tmb = 25 | - | 75 | A | |
ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 240 | A | |
Avalanche ruggedness | |||||
EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 69 A; tp = 0.27 ms; VDD 40 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 |
- | 475 | mJ |
·Logic level threshold
·Very low on-state resistance.