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PHB125N06LT, PHB125N06T, PHB129NQ04LT

PHB125N06LT, PHB125N06T, PHB129NQ04LT Selling Leads, Datasheet

MFG:PHILIPS  Package Cooled:.  D/C:05+/06+

PHB125N06LT, PHB125N06T, PHB129NQ04LT Picture

PHB125N06LT, PHB125N06T, PHB129NQ04LT Datasheet download

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Part Number: PHB125N06LT

 

MFG: PHILIPS

Package Cooled: .

D/C: 05+/06+

 

 

 
 
 
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  • PHB18NQ10T

  • Vendor: PHILIPS D/C: 04+& Qty: 40000  Adddate: 2024-11-24
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  • extra technology limited   China
    Contact: Mr.BecksBao   MSN:baoyaming221@hotmail.com
    Tel: 86-010-62670478
    Fax: 86-010-62670458
    (0)
  • PHB29N08T

  • D/C: 01+&   Adddate: 2024-11-24
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  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)

About PHB125N06LT

PDF/DataSheet Download

Datasheet: PHB125N06LT

File Size: 73481 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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PHB125N06T Suppliers

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  • PHB18NQ10T

  • Vendor: PHILIPS D/C: 04+& Qty: 40000  Adddate: 2024-11-24
  • Inquire Now
  • extra technology limited   China
    Contact: Mr.BecksBao   MSN:baoyaming221@hotmail.com
    Tel: 86-010-62670478
    Fax: 86-010-62670458
    (0)
  • PHB29N08T

  • D/C: 01+&   Adddate: 2024-11-24
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)

About PHB125N06T

PDF/DataSheet Download

Datasheet: PHB125N06T

File Size: 69599 KB

Manufacturer: PHILIPS [Philips Semiconductors]

Download : Click here to Download

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PHB129NQ04LT Suppliers

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  • PHB18NQ10T

  • Vendor: PHILIPS D/C: 04+& Qty: 40000  Adddate: 2024-11-24
  • Inquire Now
  • extra technology limited   China
    Contact: Mr.BecksBao   MSN:baoyaming221@hotmail.com
    Tel: 86-010-62670478
    Fax: 86-010-62670458
    (0)
  • PHB29N08T

  • D/C: 01+&   Adddate: 2024-11-24
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)

About PHB129NQ04LT

PDF/DataSheet Download

Datasheet: PHB129NQ04LT

File Size: 98445 KB

Manufacturer: PHILIPS [Philips Semiconductors]

Download : Click here to Download

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PHB125N06LT General Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.

PHB125N06LT Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS
VDGR
VGS

ID
IDM
Ptot
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
a
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 to 175
Tj = 25 to 175; RGS = 20 kW

Tmb = 25
Tmb = 100
Tmb = 25
Tmb = 25
-
-
-
-
-
-
-
- 55
55
55
± 13
75
75
240
250
175
V
V
V
A
A
A
W

PHB125N06LT Features

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance

PHB125N06LT Connection Diagram

PHB125N06T General Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.

PHB125N06T Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)1
Drain current (DC)1
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 k
-
Tmb = 25
Tmb = 100
Tmb = 25
Tmb = 25
-
-
-
-
-
-
-
-
- 55
55
55
20
75
75
240
250
175
V
V
V
A
A
A
W

PHB125N06T Connection Diagram

PHB129NQ04LT General Description

Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

PHB129NQ04LT Maximum Ratings

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 40 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 40 V
VGS gate-source voltage (DC)   - ±15 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 75 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 75 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 240 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 200 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 240 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 69 A;
tp = 0.27 ms; VDD 40 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25
- 475 mJ

PHB129NQ04LT Features

·Logic level threshold
·Very low on-state resistance.

PHB129NQ04LT Typical Application

·Motors, lamps, solenoids
·DC-to-DC converters
·Uninterruptible power supplies
·General industrial applications.

PHB129NQ04LT Connection Diagram

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