PHB11N03LT, PHB11N06LT, PHB11N50E Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:. D/C:06+
PHB11N03LT, PHB11N06LT, PHB11N50E Datasheet download
Part Number: PHB11N03LT
MFG: PHILIPS
Package Cooled: .
D/C: 06+
PHB11N03LT, PHB11N06LT, PHB11N50E
- Table of contents:
Info of PHB11N03LT
Info of PHB11N06LT
Info of PHB11N50E
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About PHB11N03LT
PDF/DataSheet Download
Datasheet: PHB11N03LT
File Size: 107649 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About PHB11N06LT
PDF/DataSheet Download
Datasheet: PHB11N06LT
File Size: 117683 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB11N50E
PDF/DataSheet Download
Datasheet: PHB11N50E
File Size: 42621 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB11N03LT General Description
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology.
PHB11N03LT Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS VGSM ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Pulsed gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 kW Tj 150 Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 |
- - - - - - - - - 55 |
30 30 ± 15 ± 20 10.3 7.3 41 33 175 |
V V V V A A A W |
PHB11N03LT Features
• 'Trench' technology
• Low on-state resistance
• Fast switching
• Logic level compatible
• Low on-state resistance
• Fast switching
• Logic level compatible
PHB11N03LT Typical Application
• d.c. to d.c. converters
• switched mode power supplies
• switched mode power supplies
PHB11N03LT Connection Diagram
PHB11N06LT General Description
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology.
PHB11N06LT Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS VGSM ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Pulsed gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 kW Tj 150 Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 |
- - - - - - - - - 55 |
55 55 ± 15 ± 20 10.3 7.3 41 33 175 |
V V V V A A A W |
PHB11N06LT Features
• 'Trench' technology
• Low on-state resistance
• Fast switching
• Logic level compatible
• Low on-state resistance
• Fast switching
• Logic level compatible
PHB11N06LT Typical Application
• d.c. to d.c. converters
• switched mode power supplies
• switched mode power supplies
PHB11N06LT Connection Diagram
PHB11N50E General Description
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
PHB11N50E Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
500 500 ± 30 10.4 6.6 42 156 150 |
V V V A A A W |
PHB11N50E Features
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHB11N50E Connection Diagram
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