PHB10N40 Selling Leads, Price trend, PHB10N40 DataSheet download, circuit diagram from SeekIC.com

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IDIDMPDD/TmbVGSEASIASTj, Tstg Continuous drain currentPulsed drain currentTotal dissipationLinear derating factorGate-source voltageSingle pulse avalancheenergyPeak avalanche currentOperating junction andstorage temperat...

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PHB10N40: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IDIDMPDD/TmbVGSEASIASTj, Tstg Continuous drain currentPulsed drain currentTotal dissipationLinear derating factorGate-so...

PHB10N40 Data Sheet

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Part Number:: PHB10N40
Supply Ability:: 5000

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Upload time: 2024/11/23

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Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
I_D I_DMP_D_D/T_mb V_GS E_ASI_AST_j, T_stg	Continuous drain current Pulsed drain current Total dissipation Linear derating factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range	T_mb = 25 ; V_GS = 10 V T_mb = 100 ; V_GS = 10 V T_mb = 25 T_mb = 25 T_mb > 25 V_DD 50 V; starting T_j= 25; R_GS = 50 ; V_GS = 10 V V_DD 50 V; starting T_j = 25; R_GS= 50 ; V_GS= 10 V	- - - - - - - - - 55	10.7 6.7 43 147 1.176 ± 30 520 10 150	A A A W W/K V mJ A

Description

PHB10N40 N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.

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PHB10N40

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