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PHB100N03LT

Features: ·TrenchMOS™ technology·Low on-state resistance·Avalanche ruggedness rated·Logic level compatible·Surface mount package.Application·DC to DC converters·Synchronous rectification.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC)...

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PHB100N03LT: Features: ·TrenchMOS™ technology·Low on-state resistance·Avalanche ruggedness rated·Logic level compatible·Surface mount package.Application·DC to DC converters·Synchronous rectification.Pinou...

PHB100N03LT Data Sheet

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Part Number:
PHB100N03LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·TrenchMOS™ technology
·Low on-state resistance
·Avalanche ruggedness rated
·Logic level compatible
·Surface mount package.


Application

·DC to DC converters
·Synchronous rectification.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj =25 to 175 - 25 V
VDGR drain-gate voltage (DC) Tj =25 to 175 ; RGS = 20 k - 25 V
VGS gate-source voltage   - ±15 V
VGSM peak gate-source voltage TP 50 s; pulsed; duty cycle = 25%   ±20  
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3 - 75 A
Tmb = 100 ; VGS = 5 V; Figure 2 - 67 A
IDM peak drain current Tmb = 100 ; pulsed; tp 10 s; Figure 3 - 240 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 125 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 240 A
Avalanche ruggedness
EAS non-repetitive avalanche energy unclamped inductive load; ID =75 A;
tp = 0.2 ms; VDD 55 V; RGS = 50 ;
VGS = 5 V; starting at Tj = 25 ;Figure 4 		- 240 mJ
IAS non-repetitive avalanche current unclamped inductive load; VDD 15 V; RGS = 50 ;VGS = 5 V; Figure 4 - 75 mJ



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHB100N03LT in SOT404 (D2-PAK).


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