PHB112N06T, PHB112NQ06T, PHB119NQ06T Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:TO-263 D/C:TO
PHB112N06T, PHB112NQ06T, PHB119NQ06T Datasheet download
Part Number: PHB112N06T
MFG: PHILIPS
Package Cooled: TO-263
D/C: TO
PHB112N06T, PHB112NQ06T, PHB119NQ06T
- Table of contents:
Info of PHB112N06T
Info of PHB112NQ06T
Info of PHB119NQ06T
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About PHB112N06T
PDF/DataSheet Download
Datasheet: PHB112N06T
File Size: 268902 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About PHB100N03LT
PDF/DataSheet Download
Datasheet: PHB100N03LT
File Size: 339176 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About PHB119NQ06T
PDF/DataSheet Download
Datasheet: PHB119NQ06T
File Size: 96357 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB112N06T General Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology.
Product availability:
PHP112N06T in SOT78 (TO-220AB)
PHB112N06T in SOT404 (D2-PAK).
Product availability:
PHP112N06T in SOT78 (TO-220AB)
PHB112N06T in SOT404 (D2-PAK).
PHB112N06T Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | Tj =25 to 175 | - | 55 | V |
| VDGR | drain-gate voltage (DC) | Tj =25 to 175 ; RGS = 20 k | - | 55 | V |
| VGS | gate-source voltage(DC) | - | ±20 | V | |
| ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
| Tmb = 100 ; VGS = 10 V; Figure 2 and 3 | - | 52.5 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 400 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 200 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) Tmb = 25 | - | 75 | A | |
| ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 400 | A | |
| Avalanche ruggedness | |||||
| EAS | non-repetitive drain-source avalanche energy |
unclamped inductive load;IAS = 60A; tp = 0.1 ms; VDD 25 V;RGS = 50 VGS = 5 V; starting Tj = 25 Figure 4 |
- | 360 | mJ |
PHB112N06T Features
·Fast switching
·Very low on-state resistance.
·Very low on-state resistance.
PHB112N06T Typical Application
·General purpose switching
·Switched mode power supplies.
·Switched mode power supplies.
PHB112N06T Connection Diagram
PHB119NQ06T General Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
PHB119NQ06T Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | 25 Tj 175 | - | 55 | V |
| VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 55 | V |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
| Tmb = 100 ; VGS = 10 V; Figure 2 | - | 75 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 200 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) Tmb = 25 | - | 75 | A | |
| ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 240 | A | |
| Avalanche ruggedness | |||||
| EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 75A; tp = 0.1 ms; VDD 55 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 |
- | 280 | mJ |
PHB119NQ06T Features
·Standard level threshold
·Very low on-state resistance.
PHB119NQ06T Typical Application
·Motors, lamps, solenoids
·DC-to-DC converters
·Uninterruptible power supplies
·General industrial applications.
·DC-to-DC converters
·Uninterruptible power supplies
·General industrial applications.
PHB119NQ06T Connection Diagram
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