PHB110NQ06LT, PHB110NQ08LT, PHB110NQ08T Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:. D/C:06+
PHB110NQ06LT, PHB110NQ08LT, PHB110NQ08T Datasheet download
Part Number: PHB110NQ06LT
MFG: PHILIPS
Package Cooled: .
D/C: 06+
MFG:PHILIPS Package Cooled:. D/C:06+
PHB110NQ06LT, PHB110NQ08LT, PHB110NQ08T Datasheet download
MFG: PHILIPS
Package Cooled: .
D/C: 06+
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Datasheet: PHB110NQ06LT
File Size: 96367 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHB110NQ08LT
File Size: 93460 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHB110NQ08T
File Size: 91928 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | 25 Tj 175 | - | 55 | V |
VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 55 | V |
VGS | gate-source voltage (DC) | - | ±15 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
Tmb = 100 ; VGS = 10 V; Figure 2 | - | 75 | A | ||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 200 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IS | source (diode forward) current (DC) Tmb = 25 | - | 75 | A | |
ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 240 | A | |
Avalanche ruggedness | |||||
EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD 55 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 |
- | 280 | mJ |
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | 25 Tj 175 | - | 75 | V |
VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 75 | V |
VGS | gate-source voltage (DC) | - | ±20 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
Tmb = 100 ; VGS = 10 V; Figure 2 | - | 75 | A | ||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 230 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IS | source (diode forward) current (DC) Tmb = 25 | - | 75 | A | |
ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 240 | A | |
Avalanche ruggedness | |||||
EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 75 A; tp = 0.15 ms; VDD 75 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 |
- | 560 | mJ |