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Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 12 A, L = 1.0 mH, RG = 25 )
EAS
71.7
mJ
Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.15 in sq) [1 oz] including traces.
NTD65N03R Features
• Low RDS(on) • Ultra Low Gate Charge • Low Reverse Recovery Charge • Pb−Free Packages are Available
NTD65N03R Typical Application
• Desktop CPU Power • DC−DC Converters • High and Low Side Switch