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NTD60N03T4, NTD65N03R, NTD65N03R-001

NTD60N03T4, NTD65N03R, NTD65N03R-001 Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:.  D/C:06+

NTD60N03T4 Picture

NTD60N03T4, NTD65N03R, NTD65N03R-001 Datasheet download

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Part Number: NTD60N03T4

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET N-CH 25V 9.5A IPAK

 

 
 
 
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  • NTD014

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  • NTD110N02RT4G

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About NTD110N02R

PDF/DataSheet Download

Datasheet: NTD110N02R

File Size: 65651 KB

Manufacturer: ONSEMI [ON Semiconductor]

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  • NTD014

  • Pack: SOT D/C: 10+& Qty: 6430 Note: new &original?  Adddate: 2024-06-11
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    Contact: Ms.KE   MSN:chenglifa@hotmail.com
    Tel: 86-755-82564760
    Fax: 86-755-82564760
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About NTD65N03R

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Datasheet: NTD65N03R

File Size: 69632 KB

Manufacturer: ON SEMICONDUCTOR

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  • NTD014

  • Pack: SOT D/C: 10+& Qty: 6430 Note: new &original?  Adddate: 2024-06-11
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  • chenglifa   China
    Contact: Ms.KE   MSN:chenglifa@hotmail.com
    Tel: 86-755-82564760
    Fax: 86-755-82564760
    (53)
  • NTD110N02RT4G

  • Vendor: ON Qty: 3940 Note: 0  Adddate: 2024-06-11
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  •   China
    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
    Fax: 86-755-61685117
    (17)

About NTD110N02R

PDF/DataSheet Download

Datasheet: NTD110N02R

File Size: 65651 KB

Manufacturer: ONSEMI [ON Semiconductor]

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NTD60N03T4 Parameters

Technical/Catalog InformationNTD60N03T4
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)28V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs7.5 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 2150pF @ 24V
Power - Max75W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 4.5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTD60N03T4
NTD60N03T4
NTD60N03T4OS ND
NTD60N03T4OSND
NTD60N03T4OS

NTD65N03R Parameters

Technical/Catalog InformationNTD65N03R
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C9.5A
Rds On (Max) @ Id, Vgs8.4 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 1400pF @ 20V
Power - Max1.3W
PackagingTube
Gate Charge (Qg) @ Vgs16nC @ 5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTD65N03R
NTD65N03R

NTD65N03R Maximum Ratings

Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 25 V
Gate−to−Source Voltage VGS +20 V
Continuous Drain
Current (RJC) Limited
by Die
Steady
State
TC = 25°C ID 65 A
TC = 85°C 45
Continuous Drain
Current (RJC) Limited
by Wire
TC = 25°C ID 32 A
Power Dissipation
(RJC)
TC = 25°C PD 50 W
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C ID 11.4 A
Power Dissipation
(Note 1)
TC = 85°C 8.9 W
TA = 25°C PD 1.88
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C ID 9.5 A
TA = 85°C 7.4
Power Dissipation
(Note 2)
TA = 25°C PD 1.3 W
Pulsed Drain Current tp = 10 s IDM 130 A
Operating Junction and Storage
Temperature
TJ, Tstg −55 to 175 °C
Drain−to−Source (dv/dt) dv/dt 2.0 V/ns
Source Current (Body Diode) IS 2.1 A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V, IL = 12 A,
L = 1.0 mH, RG = 25  )
EAS 71.7 mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
    (Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
   (Cu area = 0.15 in sq) [1 oz] including traces.

NTD65N03R Features

• Low RDS(on)
• Ultra Low Gate Charge
• Low Reverse Recovery Charge
• Pb−Free Packages are Available

NTD65N03R Typical Application

• Desktop CPU Power
• DC−DC Converters
• High and Low Side Switch

NTD65N03R Connection Diagram

NTD65N03R-001 Parameters

Technical/Catalog InformationNTD65N03R-001
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C9.5A
Rds On (Max) @ Id, Vgs8.4 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 1400pF @ 20V
Power - Max1.3W
PackagingTube
Gate Charge (Qg) @ Vgs16nC @ 5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTD65N03R 001
NTD65N03R001

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