MOSFET 25V 45A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 45 A | ||
Resistance Drain-Source RDS (on) : | 0.0126 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Rating | Symbol | Value | Unit |
Drain−to−Source Voltage | VDSS | 25 | Vdc |
Drain−to−Gate Voltage (RGS = 10 M) | VDGR | ±20 | Vdc |
Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current − Continuous @ TC = 25°C, Chip − Continuous @ TA = 25°C, Limited by Wires − Single Pulse (tp 3 10 s) |
RJC PD PD ID IDM |
3.0 50 45 32 100 |
°C/W W AAA |
Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) |
PD | 71.4 2.1 9.2 |
°C/W W A |
Operating and Storage Temperature Range | TJ, Tstg | −55 to +175 |
°C |
Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C |
RJA PD lD |
100 1.5 7.8 |
°C/W W A |
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL | 260 | °C |