NTD32N06L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 28 mOhms at 5 V


Features:

• Smaller Package than MTB30N06VL
• Lower RDS(on), VDS(on), and Total Gate Charge
• Lower and Tighter V_SD
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge


Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits


Specifications

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad size.

Parameters:

Technical/Catalog Information	NTD32N06L
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	28 mOhm @ 16A, 5V
Input Capacitance (Ciss) @ Vds	1700pF @ 25V
Power - Max	1.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	50nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTD32N06L NTD32N06L