NTD12N10

MOSFET 100V 12A N-Channel

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SeekIC No. : 00165634 Detail

NTD12N10: MOSFET 100V 12A N-Channel

floor Price/Ceiling Price

Part Number:
NTD12N10
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 165 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : DPAK
Packaging : Tube
Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 165 mOhms


Features:

• Pb−Free Package is Available
• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Avalanche Energy Specified
• IDSS and RDS(on) Specified at Elevated Temperature
• Mounting Information Provided for the DPAK Package



Application

• PWM Motor Controls
• Power Supplies
• Converters



Pinout

  Connection Diagram


Specifications

Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
100
Vdc
Drain−to−Gate Voltage (RGS = 1.0 M)
VDGB
100
Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp10 ms)
VGS
VGSM
±20
±30
Vdc
Drain Current
− Continuous @ TA = 25
− Continuous @ TA = 100
− Pulsed (Note 3)

ID
ID
IDM

12
7.0
36
Adc
Apk
Total Power Dissipation
Derate above 25
Total Power Dissipation @ TC = 25 (Note 1)
Total Power Dissipation @ TC = 25 (Note 2)
PD
56.6
0.38
1.76
1.28

W
W/
W
W

Operating and Storage Temperature Range
TJ, Tstg
−55 to +175
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 50 Vdc, VGS = 10 Vdc,
IL = 12 Apk, L = 1.0 mH, RG = 25)
EAS
75
mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)

RJC
RJA
RJA
2.65
85
117
/W
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds
TL
260

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended pad size.
3. Pulse Test: Pulse Width = 10  s, Duty Cycle = 2%.




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