MFG:ON Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:. D/C:05+
NTD110N02RT4, NTD110N02RT4G, NTD12N10 Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor (VA)
Package Cooled: .
D/C: 05+
Description: MOSFET N-CH 24V 12.5A DPAK
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PDF/DataSheet Download
Datasheet: NTD110N02RT4
File Size: 65651 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NTD110N02RT4G
File Size: 65651 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NTD12N10
File Size: 79638 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NTD110N02RT4G |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25° C | 12.5A |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 20A, 10V |
| Input Capacitance (Ciss) @ Vds | 3440pF @ 20V |
| Power - Max | 1.5W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 28nC @ 4.5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTD110N02RT4G NTD110N02RT4G NTD110N02RT4GOSCT ND NTD110N02RT4GOSCTND NTD110N02RT4GOSCT |
| Rating |
Symbol |
Value |
Unit |
| Drain−to−Source Voltage |
VDSS |
100 |
Vdc |
| Drain−to−Gate Voltage (RGS = 1.0 M) |
VDGB |
100 |
Vdc |
| Gate−to−Source Voltage − Continuous − Non−Repetitive (tp10 ms) |
VGS VGSM |
±20 ±30 |
Vdc |
| Drain Current − Continuous @ TA = 25 − Continuous @ TA = 100 − Pulsed (Note 3) |
ID ID IDM |
12 7.0 36 |
Adc Apk |
| Total Power Dissipation Derate above 25 Total Power Dissipation @ TC = 25 (Note 1) Total Power Dissipation @ TC = 25 (Note 2) |
PD |
56.6 0.38 1.76 1.28 |
W |
| Operating and Storage Temperature Range |
TJ, Tstg |
−55 to +175 |
|
| Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25 (VDD = 50 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25) |
EAS |
75 |
mJ |
| Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) |
RJC RJA RJA |
2.65 85 117 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
|
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended pad size.
3. Pulse Test: Pulse Width = 10 s, Duty Cycle = 2%.
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