MOSFET 25V 14A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 14 A | ||
Resistance Drain-Source RDS (on) : | 95 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Parameter |
Symbol | Value | Unit |
Drain−to−Source Voltage | VDSS | 25 | Vdc |
Gate−to−Source Voltage − Continuous | VGS | ±20 | Vdc |
Thermal Resistance − Junction−to−Case Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C, Chip − Continuous @ TA = 25°C, Limited by Package − Single Pulse (tp < 10 s) |
RJA PD ID ID ID |
6.0 20.8 14 11.4 28 |
°C/W W A A A |
Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C |
RJA PD ID |
80 1.56 3.1 |
°C/W W A |
Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25° |
RJA PD ID |
120 1.04 2.5 |
°C/W W A |
Operating and Storage Temperature Range | TJ, Tstg | −55 to 150 |
°C |
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 second |
TL | 260 | °C |