NP82P04PLF, NP83C266BDR, NP83P06PDG-E1 Selling Leads, Datasheet
MFG:NEC Package Cooled:TO-252 D/C:08+/09+
NP82P04PLF, NP83C266BDR, NP83P06PDG-E1 Datasheet download
Part Number: NP82P04PLF
MFG: NEC
Package Cooled: TO-252
D/C: 08+/09+
NP82P04PLF, NP83C266BDR, NP83P06PDG-E1
- Table of contents:
Info of NP82P04PLF
Info of NP83C266BDR
Info of NP83P06PDG-E1
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About NP82P04PLF-E1-AY
PDF/DataSheet Download
Datasheet: NP82P04PLF-E1-AY
File Size: 186901 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NP80N055
PDF/DataSheet Download
Datasheet: NP80N055
File Size: 81398 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NP80N055
PDF/DataSheet Download
Datasheet: NP80N055
File Size: 81398 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
NP82P04PLF General Description
The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications.
NP82P04PLF Maximum Ratings
Drain to Source Voltage (VGS = 0 V) VDSS −40 V
Gate to Source Voltage (VDS = 0 V) VGSS m20 V
Drain Current (DC) (TC = 25°C) ID(DC) m82 A
Drain Current (pulse) Note1 ID(pulse) m246 A
Total Power Dissipation (TC = 25°C) PT1 150 W
Total Power Dissipation (TA = 25°C) PT2 1.8 W
Channel Temperature Tch 175 °C
Storage Temperature Tstg −55 to +175 °C
Repetitive Avalanche Current Note2 IAR 46 A
Repetitive Avalanche Energy Note2 EAR 212 mJ
Notes :
1. PW 10 s, Duty Cycle 1%
2. Tch 150°C, VDD = −20 V, RG = 25 , VGS = −20 0 V
Gate to Source Voltage (VDS = 0 V) VGSS m20 V
Drain Current (DC) (TC = 25°C) ID(DC) m82 A
Drain Current (pulse) Note1 ID(pulse) m246 A
Total Power Dissipation (TC = 25°C) PT1 150 W
Total Power Dissipation (TA = 25°C) PT2 1.8 W
Channel Temperature Tch 175 °C
Storage Temperature Tstg −55 to +175 °C
Repetitive Avalanche Current Note2 IAR 46 A
Repetitive Avalanche Energy Note2 EAR 212 mJ
Notes :
1. PW 10 s, Duty Cycle 1%
2. Tch 150°C, VDD = −20 V, RG = 25 , VGS = −20 0 V
NP82P04PLF Features
• Super low on-state resistance RDS(on)1 = 8 m MAX. (VGS = −10 V, ID = −41 A) RDS(on)2 = 12 m MAX. (VGS = −4.5 V, ID = −41 A)
• Low input capacitance Ciss = 5000 pF TYP.
• Built-in gate protection diode
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