NP82N055CHE, NP82N055CLE, NP82N055DHE Selling Leads, Datasheet
MFG:NEC Package Cooled:TO D/C:08+
NP82N055CHE, NP82N055CLE, NP82N055DHE Datasheet download
Part Number: NP82N055CHE
MFG: NEC
Package Cooled: TO
D/C: 08+
NP82N055CHE, NP82N055CLE, NP82N055DHE
- Table of contents:
Info of NP82N055CHE
Info of NP82N055CLE
Info of NP82N055DHE
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About NP82N055CHE
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Datasheet: NP82N055CHE
File Size: 79219 KB
Manufacturer: NEC [NEC]
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About NP80N055
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Datasheet: NP80N055
File Size: 81398 KB
Manufacturer: NEC [NEC]
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About NP82N055DHE
PDF/DataSheet Download
Datasheet: NP82N055DHE
File Size: 79219 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
NP82N055CHE General Description
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
NP82N055CHE Maximum Ratings
| Drain to Source Voltage (VGS = 0 V) | VDSS | 55 | V |
| Gate to Source Voltage (VDS = 0 V) | VGSS | ±20 | V |
| Drain Current (DC) | ID(DC) | ±82 | A |
| Drain Current (Pulse) Note1 | ID(pulse) | ±300 | A |
| Total Power Dissipation (TA = 25 °C) | PT | 163 | W |
| Total Power Dissipation (TC = 25 °C) | PT | 88 | W |
| Single Avalanche Current Note2 | IAS | 34 / 27 / 10 | A |
| Single Avalanche Energy Note2 | EAS | 11 / 72 / 100 | mJ |
| Channel Temperature | Tch | 175 | °C |
| Storage Temperature | Tstg | 55 to + 175 | °C |
2. PW 10 s, Duty cycle 1%
3. Starting Tch = 25°C, VDD = 28 V, RG = 25 , VGS = 20 0 V (See Figure 4.)
NP82N055CHE Features
•Channel temperature 175 degree rated
• Super low on-state resistance RDS(on) = 8.6 m MAX. (VGS = 10 V, ID = 41 A)
• Low Ciss: Ciss = 3500 pF TYP.
• Built-in gate protection diode
• Super low on-state resistance RDS(on) = 8.6 m MAX. (VGS = 10 V, ID = 41 A)
• Low Ciss: Ciss = 3500 pF TYP.
• Built-in gate protection diode
NP82N055DHE General Description
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
NP82N055DHE Maximum Ratings
| Drain to Source Voltage (VGS = 0 V) | VDSS | 55 | V |
| Gate to Source Voltage (VDS = 0 V) | VGSS | ±20 | V |
| Drain Current (DC) | ID(DC) | ±82 | A |
| Drain Current (Pulse) Note1 | ID(pulse) | ±300 | A |
| Total Power Dissipation (TA = 25 °C) | PT | 163 | W |
| Total Power Dissipation (TC = 25 °C) | PT | 88 | W |
| Single Avalanche Current Note2 | IAS | 34 / 27 / 10 | A |
| Single Avalanche Energy Note2 | EAS | 11 / 72 / 100 | mJ |
| Channel Temperature | Tch | 175 | °C |
| Storage Temperature | Tstg | 55 to + 175 | °C |
2. PW 10 s, Duty cycle 1%
3. Starting Tch = 25°C, VDD = 28 V, RG = 25 , VGS = 20 0 V (See Figure 4.)
NP82N055DHE Features
•Channel temperature 175 degree rated
• Super low on-state resistance RDS(on) = 8.6 m MAX. (VGS = 10 V, ID = 41 A)
• Low Ciss: Ciss = 3500 pF TYP.
• Built-in gate protection diode
• Super low on-state resistance RDS(on) = 8.6 m MAX. (VGS = 10 V, ID = 41 A)
• Low Ciss: Ciss = 3500 pF TYP.
• Built-in gate protection diode
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