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NP82P04PLF

Features: • Super low on-state resistance RDS(on)1 = 8 m MAX. (VGS = −10 V, ID = −41 A) RDS(on)2 = 12 m MAX. (VGS = −4.5 V, ID = −41 A) • Low input capacitance Ciss = 5000 pF TYP.• Built-in gate protection diodeSpecificationsDrain to Source Voltage (VGS = ...

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NP82P04PLF: Features: • Super low on-state resistance RDS(on)1 = 8 m MAX. (VGS = −10 V, ID = −41 A) RDS(on)2 = 12 m MAX. (VGS = −4.5 V, ID = −41 A) • Low input capacitance Ci...

NP82P04PLF Data Sheet

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Part Number:
NP82P04PLF
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Features:

• Super low on-state resistance RDS(on)1 = 8 m MAX. (VGS = −10 V, ID = −41 A) RDS(on)2 = 12 m MAX. (VGS = −4.5 V, ID = −41 A)
• Low input capacitance Ciss = 5000 pF TYP.
• Built-in gate protection diode




Specifications

Drain to Source Voltage (VGS = 0 V)                          VDSS               −40             V
Gate to Source Voltage (VDS = 0 V)                           VGSS               m20             V
Drain Current (DC) (TC = 25°C)                                 ID(DC)            m82             A
Drain Current (pulse) Note1                                       ID(pulse)         m246           A
Total Power Dissipation (TC = 25°C)                         PT1                  150            W
Total Power Dissipation (TA = 25°C)                          PT2                  1.8             W
Channel Temperature Tch 175 °C
Storage Temperature                                                 Tstg           −55 to +175     °C
Repetitive Avalanche Current Note2                           IAR                    46              A
Repetitive Avalanche Energy Note2                            EAR                   212            mJ

Notes :
1. PW 10 s, Duty Cycle 1%
2. Tch 150°C, VDD = −20 V, RG = 25 , VGS = −20 0 V


Description

The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications.


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