Features: • Channel temperature 175 degree rated• Super low on-state resistance RDS(on) = 8.6 m MAX. (VGS = 10 V, ID = 41 A)• Low input capacitance Ciss = 3500 pF TYP.• Built-in gate protection diodeSpecificationsDrain to Source Voltage (VGS = 0 V) VDSS 55 VGate to Source V...
NP82N055NHE: Features: • Channel temperature 175 degree rated• Super low on-state resistance RDS(on) = 8.6 m MAX. (VGS = 10 V, ID = 41 A)• Low input capacitance Ciss = 3500 pF TYP.• Built...
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Drain to Source Voltage (VGS = 0 V) VDSS 55 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) Note1 ID(DC) ±82 A
Drain Current (pulse) Note2 ID(pulse) ±300 A
Total Power Dissipation (TA = 25°C) PT 1.8 W
Total Power Dissipation (TC = 25°C) PT 163 W
Channel Temperature Tch 175 °C
Storage Temperature Tstg −55 to +175 °C
Single Avalanche Current Note3 IAS 72/49/17 A
Single Avalanche Energy Note3 EAS 51/240/289 mJ
Notes :
1. Calculated constant current according to MAX. allowable channel temperature.
2. PW 10 s, Duty cycle 1%
3. Starting Tch = 25°C, VDD = 28 V, RG = 25 , VGS = 20 0 V (See Figure 4.)