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NP80N055ELE

Features: *Channel temperature 175 degree rated*Super low on-state resistance RDS(on)1 = 11 m MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 m MAX. (VGS = 5 V, ID = 40 A)*Low Ciss : Ciss = 2900 pF TYP.*Built-in gate protection diodeSpecificationsDrain to Source Voltage VDSS55 VGate to Source Voltage V...

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NP80N055ELE: Features: *Channel temperature 175 degree rated*Super low on-state resistance RDS(on)1 = 11 m MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 m MAX. (VGS = 5 V, ID = 40 A)*Low Ciss : Ciss = 2900 pF TYP.*...

NP80N055ELE Data Sheet

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Part Number:
NP80N055ELE
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Features:

*Channel temperature 175 degree rated
*Super low on-state resistance
  RDS(on)1 = 11 m MAX. (VGS = 10 V, ID = 40 A)
  RDS(on)2 = 13 m MAX. (VGS = 5 V, ID = 40 A)
*Low Ciss : Ciss = 2900 pF TYP.
*Built-in gate protection diode


Specifications

Drain to Source Voltage                       VDSS                       55                   V
Gate to Source Voltage                        VGSS                      ±20                 V
Drain Current (DC) Note1                      I D(DC)                   ±80                 A
Drain Current (Pulse)Note2                   I D(pulse)              ±200                A
Total Power Dissipation (TA = 25 )    PT                           1.8                 W
Total Power Dissipation (TC = 25 )    PT                         120                  W
Single Avalanche Current  Note3           IAS                      45 / 30 / 10        A
Single Avalanche Energy  Note3           EAS                       2.0 / 90 / 100    mJ
Channel Temperature                         Tch                         175
Storage Temperature                         Tstg                       55 to +175


Description

 These products NP80N055ELE are N-channel MOS Field Effect Transistor designed for high current switching applications.


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