NP80N03MLE-S18-AY, US $ 1.14-1.14, NP80N03MLE-S18-AY DataSheet download, circuit diagram from SeekIC.com

See larger image

SeekIC No. : 003432320 Detail

NP80N03MLE-S18-AY: MOSFET N-CH 30V 80A TO-220

NP80N03MLE-S18-AY Data Sheet

US $ 1.14~1.14 / Piece | Get Latest Price

Part Number:: NP80N03MLE-S18-AY
Mfg:
Supply Ability:: 5000

Price Break

Qty
0~800

Unit Price
$1.14

Processing time
15 Days

View more price & deliveries

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

NP80N03KDE-E1-AY evaluate
US $1.03 - 1.03 / Piece

MOSFET N-CH 30V 80A TO-263
NP80N03KLE-E1-AY evaluate
US $.7 - .7 / Piece

MOSFET N-CH 30V 80A TO-263
NP80N04KHE-E1-AY evaluate
US $.56 - .56 / Piece

MOSFET N-CH 40V 80A TO-263

Product Details

Quick Details

Series:	-	Manufacturer:	Renesas Electronics America
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	19.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Logic Level Gate	Drain to Source Voltage (Vdss):	30V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	80A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	7 mOhm @ 40A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	2.5V @ 250µA	Gate Charge (Qg) @ Vgs:	72nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	3900pF @ 25V
Power - Max:	1.8W	Mounting Type:	Through Hole
Package / Case:	TO-220-3	Supplier Device Package:	TO-220

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 1.8W
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) @ Vds: 3900pF @ 25V
Manufacturer: Renesas Electronics America
Current - Continuous Drain (Id) @ 25° C: 80A
Supplier Device Package: TO-220
Rds On (Max) @ Id, Vgs: 7 mOhm @ 40A, 10V

Customers Who Bought This Item Also Bought

BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details
DS-4008HCI English version video capture card Hai Kang
US $$120.00 - 120.00 / Piece

Supply Ability:120Week

View details
2DI300A-050 MODULE
US $$30.00 - 30.00 / Piece

Supply Ability:100Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

NP80N03MLE-S18-AY

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Quick Details

Description

Customers Who Bought This Item Also Bought

Kits(573)

Isolators(194)

Power Supplies - Board Mount(3035)

Power Supplies - External/Internal (Off-Board)(631)

RF and RFID(1780)

Integrated Circuits (ICs)(111140)