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NP82N055DLE, NP82N055KHE, NP82N055KLE

NP82N055DLE, NP82N055KHE, NP82N055KLE Selling Leads, Datasheet

MFG:NEC  Package Cooled:TO-262  D/C:08+/09+

NP82N055DLE, NP82N055KHE, NP82N055KLE Picture

NP82N055DLE, NP82N055KHE, NP82N055KLE Datasheet download

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Part Number: NP82N055DLE

 

MFG: NEC

Package Cooled: TO-262

D/C: 08+/09+

 

 

 
 
 
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About NP80N055

PDF/DataSheet Download

Datasheet: NP80N055

File Size: 81398 KB

Manufacturer: NEC [NEC]

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NP82N055KHE Suppliers

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About NP82N055KHE

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Datasheet: NP82N055KHE

File Size: 79219 KB

Manufacturer: NEC [NEC]

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About NP80N055

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Datasheet: NP80N055

File Size: 81398 KB

Manufacturer: NEC [NEC]

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NP82N055KHE General Description

These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

NP82N055KHE Maximum Ratings

Drain to Source Voltage (VGS = 0 V) VDSS 55 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) ID(DC) ±82 A
Drain Current (Pulse) Note1 ID(pulse) ±300 A
Total Power Dissipation (TA = 25 °C) PT 163 W
Total Power Dissipation (TC = 25 °C) PT 88 W
Single Avalanche Current Note2 IAS 34 / 27 / 10 A
Single Avalanche Energy Note2 EAS 11 / 72 / 100 mJ
Channel Temperature Tch 175 °C
Storage Temperature Tstg 55 to + 175 °C
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW 10 s, Duty cycle 1%
3. Starting Tch = 25°C, VDD = 28 V, RG = 25 , VGS = 20 0 V (See Figure 4.)

NP82N055KHE Features

•Channel temperature 175 degree rated
• Super low on-state resistance RDS(on) = 8.6 m MAX. (VGS = 10 V, ID = 41 A)
• Low Ciss: Ciss = 3500 pF TYP.
• Built-in gate protection diode

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