NP80N055ELE, NP8129, NP8210M Selling Leads, Datasheet
MFG:NEC Package Cooled:TO D/C:96+
NP80N055ELE, NP8129, NP8210M Datasheet download
Part Number: NP80N055ELE
MFG: NEC
Package Cooled: TO
D/C: 96+
NP80N055ELE, NP8129, NP8210M
- Table of contents:
Info of NP80N055ELE
Info of NP8129
Info of NP8210M
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About NP80N055ELE
PDF/DataSheet Download
Datasheet: NP80N055ELE
File Size: 81398 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NP80N055
PDF/DataSheet Download
Datasheet: NP80N055
File Size: 81398 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NP80N055
PDF/DataSheet Download
Datasheet: NP80N055
File Size: 81398 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
NP80N055ELE General Description
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
NP80N055ELE Maximum Ratings
Drain to Source Voltage VDSS 55 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) Note1 I D(DC) ±80 A
Drain Current (Pulse)Note2 I D(pulse) ±200 A
Total Power Dissipation (TA = 25 ) PT 1.8 W
Total Power Dissipation (TC = 25 ) PT 120 W
Single Avalanche Current Note3 IAS 45 / 30 / 10 A
Single Avalanche Energy Note3 EAS 2.0 / 90 / 100 mJ
Channel Temperature Tch 175
Storage Temperature Tstg 55 to +175
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) Note1 I D(DC) ±80 A
Drain Current (Pulse)Note2 I D(pulse) ±200 A
Total Power Dissipation (TA = 25 ) PT 1.8 W
Total Power Dissipation (TC = 25 ) PT 120 W
Single Avalanche Current Note3 IAS 45 / 30 / 10 A
Single Avalanche Energy Note3 EAS 2.0 / 90 / 100 mJ
Channel Temperature Tch 175
Storage Temperature Tstg 55 to +175
NP80N055ELE Features
*Channel temperature 175 degree rated
*Super low on-state resistance
RDS(on)1 = 11 m MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 13 m MAX. (VGS = 5 V, ID = 40 A)
*Low Ciss : Ciss = 2900 pF TYP.
*Built-in gate protection diode
*Super low on-state resistance
RDS(on)1 = 11 m MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 13 m MAX. (VGS = 5 V, ID = 40 A)
*Low Ciss : Ciss = 2900 pF TYP.
*Built-in gate protection diode
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