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NESG2046M33, NESG2101M05, NESG2101M05-T1

Table of contents:
Info of NESG2046M33
Info of NESG2101M05
Info of NESG2101M05-T1

NESG2046M33, NESG2101M05, NESG2101M05-T1 Selling Leads, Datasheet

MFG:NEC Package Cooled:N/A D/C:09+

NESG2046M33, NESG2101M05, NESG2101M05-T1 Picture

NESG2046M33, NESG2101M05, NESG2101M05-T1 Datasheet download

Five Points

Part Number: NESG2046M33

MFG: NEC

Package Cooled: N/A

D/C: 09+

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NESG2046M33 Maximum Ratings

Parameter	Symbol	Ratings	Unit
Drain to Source Voltage	V_DS	13	V
Gate to Source Voltage	V_GSO	5	V
Gate to Drain Voltage	V_GDO	1.5	V
Drain Current	I_D	40	A
Gate Current	I_G	130	mA
Total Power Dissipation	P_totN_ote	150	W
Channel Temperature	T_ch	150	°C
Storage Temperature	T_stg	-65 to +175	°C

NESG2046M33 Features

• IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
N_F = 0.8 dB TYP., G_a = 11.5 dB TYP. @ V_CE = 1 V, IC = 3 mA, f = 2 GHz
• HIGH BREAKDOWN VOLTAGE TECHNOLOGY
FOR SIGE TRANSISTORS : V_CEO (absolute maximum ratings) = 5.0 V
• 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE

NESG2101M05 General Description

NEC's NESG2101M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NECslo w profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.

NESG2101M05 Maximum Ratings

SYMBOLS	PARAMETERS	UNITS	RATINGS
V_CEO	Collector to Emitter Voltage	V	13.0
V_CBO	Collector to Base Voltage	V	5.0
V_EBO	Emitter to Base Voltage	V	1.5
I_C	Collector Current	mA	100
PT2	Total Power Dissipation	mW	500
T_j	Junction Temperature	°C	150
T_STG	Storage Temperature	°C	-65 to +150

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Mounted on 38 x 38 x 0.4 mm (t) glass epoxy substrate

NESG2101M05 Features

• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY V_CEO = 5 V (Absolute Maximum)
• HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz
• LOW NOISE FIGURE: N_F = 0.9 dBm at 2 GHz
• HIGH MAXIMUM STABLE POWER GAIN: M_SG= 17 dB at 2 GHz
• LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance

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