MTW45N10, MTW4B 50.000, MTW4K 40.000 Selling Leads, Datasheet
MFG:ON Package Cooled:TO-3P D/C:06+
MTW45N10, MTW4B 50.000, MTW4K 40.000 Datasheet download
Part Number: MTW45N10
MFG: ON
Package Cooled: TO-3P
D/C: 06+
MFG:ON Package Cooled:TO-3P D/C:06+
MTW45N10, MTW4B 50.000, MTW4K 40.000 Datasheet download
MFG: ON
Package Cooled: TO-3P
D/C: 06+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: MTW45N10
File Size: 159292 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MTW10N100E
File Size: 196812 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MTW10N100E
File Size: 196812 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Rating |
Symbol |
Value |
Unit |
DraintoSource Voltage |
VDSS |
100 |
Vdc |
DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
100 |
Vdc |
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
45 34.6 135 |
Adc Apk |
Total Power Dissipation Derate above 25°C |
PD |
180 1.44 |
Watts W/°C |
Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25Vdc,VGS = 10Vdc, Vdc,Peak IL =45 Apk, L =0.5 mH, RG = 25) |
EAS |
810 |
mJ |
Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
0.70 62.5 |
°C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |