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MTW32N20EG, MTW32N25, MTW32N25E

MTW32N20EG, MTW32N25, MTW32N25E Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-247  D/C:06+

MTW32N20EG Picture

MTW32N20EG, MTW32N25, MTW32N25E Datasheet download

Five Points

Part Number: MTW32N20EG

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: TO-247

D/C: 06+

Description: MOSFET N-CH 200V 32A TO247

 

 
 
 
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  • MTW32N20EG

  • Vendor: ON Pack: TO D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2024-11-26
  • Inquire Now
  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)
  • MTW32N20E

  • Vendor: ON Pack: TO D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2024-11-26
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)
  • MTW32N20EG

  • Vendor: ON Pack: TO D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2024-11-26
  • Inquire Now
  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

About MTW10N100E

PDF/DataSheet Download

Datasheet: MTW10N100E

File Size: 196812 KB

Manufacturer: MOTOROLA [Motorola, Inc]

Download : Click here to Download

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MTW32N25 Suppliers

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  • MTW32N20E

  • Vendor: ON Pack: TO D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2024-11-26
  • Inquire Now
  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)
  • MTW32N20EG

  • Vendor: ON Pack: TO D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2024-11-26
  • Inquire Now
  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

About MTW32N25

PDF/DataSheet Download

Datasheet: MTW32N25

File Size: 155539 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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MTW32N25E Suppliers

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  • MTW32N20E

  • Vendor: ON Pack: TO D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2024-11-26
  • Inquire Now
  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)
  • MTW32N20EG

  • Vendor: ON Pack: TO D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2024-11-26
  • Inquire Now
  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

About MTW32N25E

PDF/DataSheet Download

Datasheet: MTW32N25E

File Size: 155539 KB

Manufacturer: MOTOROLA [Motorola, Inc]

Download : Click here to Download

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MTW32N20EG Parameters

Technical/Catalog InformationMTW32N20EG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C32A
Rds On (Max) @ Id, Vgs75 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 5000pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs120nC @ 10V
Package / CaseTO-247-3 (TO-247AC, Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MTW32N20EG
MTW32N20EG
MTW32N20EGOS ND
MTW32N20EGOSND
MTW32N20EGOS

MTW32N25 General Description

This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTW32N25 Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
250
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
250
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40

Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
32
25
96
Adc

Apk
Total Power Dissipation
Derate above 25°C
PD
250
2.0
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =100Vdc,VGS = 10Vdc, Vdc,Peak IL =20 Apk, L =3.0 mH, RG = 25)
EAS
600
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
0.50
40
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTW32N25 Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware

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