MTW16N40E, MTW20N20E, MTW20N50 Selling Leads, Datasheet
MFG:ON Package Cooled:TO-247 D/C:TO
MTW16N40E, MTW20N20E, MTW20N50 Datasheet download
Part Number: MTW16N40E
MFG: ON
Package Cooled: TO-247
D/C: TO
MTW16N40E, MTW20N20E, MTW20N50
- Table of contents:
Info of MTW16N40E
Info of MTW20N20E
Info of MTW20N50
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About MTW16N40E
PDF/DataSheet Download
Datasheet: MTW16N40E
File Size: 222592 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTW10N100E
PDF/DataSheet Download
Datasheet: MTW10N100E
File Size: 196812 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTW20N50E
PDF/DataSheet Download
Datasheet: MTW20N50E
File Size: 198381 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTW16N40E General Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTW16N40E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
400 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
400 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
16 9.0 56 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
180 1.4 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =50Vdc,VGS = 10Vdc, Vdc,Peak IL =16Apk, L =6.8mH, RG = 25) |
EAS |
870 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
0.70 40 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
MTW16N40E Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware
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