MFG:ON Semiconductor Category:Discrete Semiconductor Products D/C:03+
MTW2805S, MTW32N20, MTW32N20E Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled:
D/C: 03+
Description: MOSFET N-CH 200V 32A TO-247
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PDF/DataSheet Download
Datasheet: MTW10N100E
File Size: 196812 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MTW32N20E
File Size: 210232 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MTW32N20E
File Size: 210232 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
| Technical/Catalog Information | MTW32N20E |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 32A |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 16A, 10V |
| Input Capacitance (Ciss) @ Vds | 5000pF @ 25V |
| Power - Max | 180W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 120nC @ 10V |
| Package / Case | TO-247-3 (TO-247AC, Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MTW32N20E MTW32N20E MTW32N20EOS ND MTW32N20EOSND MTW32N20EOS |
This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
200 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
200 |
Vdc |
| GatetoSource Voltage - Continuous |
VGS |
± 20 |
Vdc |
| Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
32 19 128 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
180 1.44 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =50Vdc,VGS = 10Vdc, Vdc,Peak IL =32Apk, L =1.58mH, RG = 25) |
EAS |
810 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
0.7 40 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
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