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MTW33N10E, MTW355, MTW35N15E

Table of contents:
Info of MTW33N10E
Info of MTW355
Info of MTW35N15E

MTW33N10E, MTW355, MTW35N15E Selling Leads, Datasheet

MFG:FRE Package Cooled:TO D/C:dc92

MTW33N10E, MTW355, MTW35N15E Datasheet download

Five Points

Part Number: MTW33N10E

MFG: FRE

Package Cooled: TO

D/C: dc92

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MTW33N10E General Description

This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTW33N10E Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	100	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	100	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (t_p 10 ms)	V_GS V_GSM	± 20 ± 40	Vdc Vpk
Drain Current - Continuous @ 25°C - Continuous @ 100°C - Single Pulse (t_p 10 s)	I_D I_D I_DM	33 20 99	Adc Apk
Total Power Dissipation @ T_c= 25°C Derate above 25°C	P_D	125 1.0	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy T_J = 25°C (V_DD =25Vdc,V_GS = 10Vdc, Vdc,Peak I_L =33 Apk, L =1.000 mH, R_G = 25)	E_AS	545	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	R_JC R_JA	1.0 40	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	T_L	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
E-FET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTW33N10E Features

• Avalanche Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware

MTW35N15E General Description

This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTW35N15E Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	150	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	150	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (t_p 10 ms)	V_GS V_GSM	± 20 ± 40	Vdc Vpk
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (t_p 10 s)	I_D I_D I_DM	35 26.9 105	Adc Apk
Total Power Dissipation Derate above 25°C	P_D	180 1.45	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy T_J = 25°C (V_DD =80Vdc,V_GS = 10Vdc, Vdc,Peak I_L =20 Apk, L =3.0 mH, R_G = 25)	E_AS	600	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	R_JC R_JA	0.70 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	T_L	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTW35N15E Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware

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