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MTW36N10E, MTW45N10E, MTW4N80

Table of contents:
Info of MTW36N10E
Info of MTW45N10E
Info of MTW4N80

MTW36N10E, MTW45N10E, MTW4N80 Selling Leads, Datasheet

MFG:MOTOROLA Package Cooled:MOT D/C:03+

MTW36N10E, MTW45N10E, MTW4N80 Datasheet download

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Part Number: MTW36N10E

MFG: MOTOROLA

Package Cooled: MOT

D/C: 03+

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MTW45N10E General Description

This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTW45N10E Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	100	Vdc
DraintoGate Voltage (RGS = 1.0 MW)	V_DGR	100	Vdc
GatetoSource Voltage - Continuous	V_GS V_GSM	± 20 ± 40	Vdc Vpk
Drain Current - Continuous Drain Current - Continuous @ 100°C Drain Current - Single Pulse (tp 3 10 ms)	I_D I_D I_DM	45 34.6 135	Adc Apk
Total Power Dissipation Derate above 25°C	P_D	180 1.44	Watts
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 5.0 mH, RG = 25 )	E_AS	810	mJ
Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient	RqJC RqJA	0.70 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	TL	260	°C
Operating and Storage Temperature Range	T_J, T_stg	55 to 150	°C

MTW45N10E Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware

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