MGFS45V2527A-01, MGFS45V2735, MGFS48B2122 Selling Leads, Datasheet
MFG:MIT Package Cooled:GF-38 D/C:N/A
MGFS45V2527A-01, MGFS45V2735, MGFS48B2122 Datasheet download
Part Number: MGFS45V2527A-01
MFG: MIT
Package Cooled: GF-38
D/C: N/A
MGFS45V2527A-01, MGFS45V2735, MGFS48B2122
- Table of contents:
Info of MGFS45V2527A-01
Info of MGFS45V2735
Info of MGFS48B2122
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About MGF 1001 P
PDF/DataSheet Download
Datasheet: MGF 1001 P
File Size: 113211 KB
Manufacturer: Mitsubishi
Download : Click here to Download
About MGFS45V2735
PDF/DataSheet Download
Datasheet: MGFS45V2735
File Size: 159921 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About MGFS48B2122
PDF/DataSheet Download
Datasheet: MGFS48B2122
File Size: 233639 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
MGFS48B2122 General Description
The MGFS48B2122 is a 60W push-pull type GaAs Power FET especially designed for use in 2.11 - 2.17GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
MGFS48B2122 Maximum Ratings
| Parameter |
Symbol |
Ratings |
Unit |
| Gate to drain voltage |
VGDO |
-20 |
V |
| Gate to source voltage |
VGSO |
-10 |
V |
| Total power dissipation *1 |
PT |
125 |
W |
| Channel temperature |
Tch |
175 |
°C |
| Storage temperature |
Tstg |
65 /+175 |
°C |
MGFS48B2122 Features
· Push-pull configuration
·High output power Pout = 60W (TYP.) @ f=2.17 GHz
· High power gain GLP = 12 dB (TYP.) @ f=2.17GHz
· High power added efficiency P.A.E. = 48 % (TYP.) @ f=2.17GHz
·High output power Pout = 60W (TYP.) @ f=2.17 GHz
· High power gain GLP = 12 dB (TYP.) @ f=2.17GHz
· High power added efficiency P.A.E. = 48 % (TYP.) @ f=2.17GHz
MGFS48B2122 Typical Application
·2.11-2.17GHz band power amplifier for W-CDMA Base Station
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