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MGF0920A, MGF0921A, MGF1302

Table of contents:
Info of MGF0920A
Info of MGF0921A
Info of MGF1302

MGF0920A, MGF0921A, MGF1302 Selling Leads, Datasheet

MFG:MIT Package Cooled:07+ D/C:50000

MGF0920A, MGF0921A, MGF1302 Datasheet download

Five Points

Part Number: MGF0920A

MFG: MIT

Package Cooled: 07+

D/C: 50000

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MGF0920A General Description

The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

MGF0920A Maximum Ratings

Symbol	Parameter	Ratings	Unit
V_GSO	Gate to sourcebreakdown voltage	-15	V
V_GDO	Gate to drain breakdown voltage	-15	V
I_D	Drain current	1500	mA
I_GR	Reverse gate current	-3.6	mA
I_GF	Forward gate current	15	mA
P_T	Total power dissipation	8.3	W
T_ch	Cannel temperature	175	°C
T_stg	Storage temperature	-65 to +175	°C

MGF0920A Features

· High output power
    Po=32dBm(TYP.) @f=1.9GHz,Pin=15dBm
· High power gain
    Gp=18dB(TYP.) @f=1.9GHz
· High power added efficiency
    hadd=45%(TYP.) @f=1.9GHz,Pin=15dBm
· Hermetic Package

MGF0920A Typical Application

· For UHF Band power amplifiers

MGF0921A General Description

The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

MGF0921A Maximum Ratings

Symbol	Parameter	Ratings	Unit
V_GSO	Gate to sourcebreakdown voltage	-15	V
V_GDO	Gate to drain breakdown voltage	-15	V
I_D	Drain current	1800	mA
I_GR	Reverse gate current	-5.0	mA
I_GF	Forward gate current	15	mA
P_T	Total power dissipation	1	W
T_ch	Cannel temperature	175	°C
T_stg	Storage temperature	-65 to +175	°C

MGF0921A Features

· High output power
    Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm
· High power gain
    Gp=17dB(TYP.) @f=1.9GHz
· High power added efficiency
    hadd=40%(TYP.) @f=1.9GHz,Pin=17dBm
· Hermetic Package

MGF0921A Typical Application

· For UHF Band power amplifiers

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