MGF0911A, MGF0913A, MGF0913A-01 Selling Leads, Datasheet
MFG:MITSUBISHI Package Cooled:RF D/C:07+
MGF0911A, MGF0913A, MGF0913A-01 Datasheet download
Part Number: MGF0911A
MFG: MITSUBISHI
Package Cooled: RF
D/C: 07+
MGF0911A, MGF0913A, MGF0913A-01
- Table of contents:
Info of MGF0911A
Info of MGF0913A
Info of MGF0913A-01
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About MGF0911A
PDF/DataSheet Download
Datasheet: MGF0911A
File Size: 23554 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About MGF0913A
PDF/DataSheet Download
Datasheet: MGF0913A
File Size: 45147 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About MGF 1001 P
PDF/DataSheet Download
Datasheet: MGF 1001 P
File Size: 113211 KB
Manufacturer: Mitsubishi
Download : Click here to Download
MGF0911A General Description
The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
MGF0911A Maximum Ratings
| Symbol | Parameter | Ratings | Unit |
| VGSO | Gate to sourcebreakdown voltage | -15 | V |
| VGDO | Gate to drain breakdown voltage | -15 | V |
| ID | Drain current | 10 | mA |
| IGR | Reverse gate current | 30 | mA |
| IGF | Forward gate current | 63 | mA |
| PT | Total power dissipation | 37.5 | W |
| Tch | Cannel temperature | 175 | °C |
| Tstg | Storage temperature | -65 to +175 | °C |
MGF0911A Features
• Class A operation
• High output power P1dB=41dBm(TYP) @2.3GHz
• High power gain GLP=11dB(TYP) @2.3GHz
• High power added efficiency hadd=40%(TYP) @2.3GHz,P1dB
• Hermetically sealed metal-ceramic package with ceramic lid
MGF0911A Typical Application
·UHF band power amplifiers
MGF0913A General Description
The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MGF0913A Maximum Ratings
| Symbol | Parameter | Ratings | Unit |
| VGSO | Gate to sourcebreakdown voltage | -15 | V |
| VGDO | Gate to drain breakdown voltage | -15 | V |
| ID | Drain current | 800 | mA |
| IGR | Reverse gate current | -2.5 | mA |
| IGF | Forward gate current | 5.4 | mA |
| PT | Total power dissipation | 5.0 | W |
| Tch | Cannel temperature | 175 | °C |
| Tstg | Storage temperature | -65 to +175 | °C |
MGF0913A Features
· High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm
· High power gain Gp=13dB(TYP.) @f=1.9GHz
· High power added efficiency hadd=48%(TYP.) @f=1.9GHz,Pin=18dBm
· Hermetic Package
· High power gain Gp=13dB(TYP.) @f=1.9GHz
· High power added efficiency hadd=48%(TYP.) @f=1.9GHz,Pin=18dBm
· Hermetic Package
MGF0913A Typical Application
· For UHF Band power amplifiers
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