MGF0909, MGF0909A, MGF0910A Selling Leads, Datasheet
MFG:MITSUBSHI D/C:05+
MGF0909, MGF0909A, MGF0910A Datasheet download
Part Number: MGF0909
MFG: MITSUBSHI
Package Cooled:
D/C: 05+
MGF0909, MGF0909A, MGF0910A
- Table of contents:
Info of MGF0909
Info of MGF0909A
Info of MGF0910A
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About MGF0909
PDF/DataSheet Download
Datasheet: MGF0909
File Size: 23485 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About MGF0909A
PDF/DataSheet Download
Datasheet: MGF0909A
File Size: 23485 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About MGF0910A
PDF/DataSheet Download
Datasheet: MGF0910A
File Size: 26850 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
MGF0910A General Description
The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
MGF0910A Maximum Ratings
| Symbol | Parameter | Ratings | Unit |
| VGSO | Gate to sourcebreakdown voltage | -15 | V |
| VGDO | Gate to drain breakdown voltage | -15 | V |
| ID | Drain current | 5 | mA |
| IGR | Reverse gate current | 15 | mA |
| IGF | Forward gate current | 31.5 | mA |
| PT | Total power dissipation | 27.3 | W |
| Tch | Cannel temperature | 175 | °C |
| Tstg | Storage temperature | -65 to +175 | °C |
MGF0910A Features
• Class A operation
• High output power P1dB=38dBm(TYP) @2.3GHz
• High power gain GLP=11dB(TYP) @2.3GHz
• High power added efficiency hadd=45%(TYP) @2.3GHz,P1dB
• Hermetically sealed metal-ceramic package with ceramic lid
• High output power P1dB=38dBm(TYP) @2.3GHz
• High power gain GLP=11dB(TYP) @2.3GHz
• High power added efficiency hadd=45%(TYP) @2.3GHz,P1dB
• Hermetically sealed metal-ceramic package with ceramic lid
MGF0910A Typical Application
·UHF band power amplifiers
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