MGF0915A, MGF0917A, MGF0919A Selling Leads, Datasheet
MFG:MIT Package Cooled:1000 D/C:07+
MGF0915A, MGF0917A, MGF0919A Datasheet download
Part Number: MGF0915A
MFG: MIT
Package Cooled: 1000
D/C: 07+
MGF0915A, MGF0917A, MGF0919A
- Table of contents:
Info of MGF0915A
Info of MGF0917A
Info of MGF0919A
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About MGF0915A
PDF/DataSheet Download
Datasheet: MGF0915A
File Size: 1346153 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About MGF0917A
PDF/DataSheet Download
Datasheet: MGF0917A
File Size: 44896 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About MGF0919A
PDF/DataSheet Download
Datasheet: MGF0919A
File Size: 44075 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
MGF0915A General Description
The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MGF0915A Maximum Ratings
| Parameter |
Symbol |
Ratings |
Unit |
| Gate to sourcebreakdown voltage | VGSO |
-15 |
V |
| Gate to drain breakdown voltage | VGDO |
-15 |
V |
| Drain current | ID |
3000 |
A |
| Reverse gate current | IGR |
-10 |
A |
| Forward gate current | IGF |
21 |
W |
| Total power dissipation | PT |
18.7 |
°C |
| Total power dissipation | Tch |
175 |
°C |
| Storage temperature | Tstg |
-65 to +175 |
V |
MGF0915A Features
• High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm
• High power gain Gp=14.5 dB(TYP.) @f=1.9GHz
• High power added efficiency add=50 %(TYP.) @f=1.9GHz,Pin=23dBm
• Hermetic Package
• High power gain Gp=14.5 dB(TYP.) @f=1.9GHz
• High power added efficiency add=50 %(TYP.) @f=1.9GHz,Pin=23dBm
• Hermetic Package
MGF0915A Typical Application
• For UHF Band power amplifiers
MGF0917A General Description
The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MGF0917A Maximum Ratings
| Symbol | Parameter | Ratings | Unit |
| VGSO | Gate to sourcebreakdown voltage | -15 | V |
| VGDO | Gate to drain breakdown voltage | -15 | V |
| ID | Drain current | 200 | mA |
| IGR | Reverse gate current | -0.6 | mA |
| IGF | Forward gate current | 2.5 | mA |
| PT | Total power dissipation | 2 | W |
| Tch | Cannel temperature | 175 | °C |
| Tstg | Storage temperature | -65 to +175 | °C |
MGF0917A Features
· High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm
· High power gain Gp=21dB(TYP.) @f=1.9GHz
· High power added efficiency hadd=38%(TYP.) @f=1.9GHz,Pin=4dBm
· Hermetic Package
· High power gain Gp=21dB(TYP.) @f=1.9GHz
· High power added efficiency hadd=38%(TYP.) @f=1.9GHz,Pin=4dBm
· Hermetic Package
MGF0917A Typical Application
· For UHF Band power amplifiers
MGF0919A General Description
The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MGF0919A Maximum Ratings
| Symbol | Parameter | Ratings | Unit |
| VGSO | Gate to sourcebreakdown voltage | -15 | V |
| VGDO | Gate to drain breakdown voltage | -15 | V |
| ID | Drain current | 800 | mA |
| IGR | Reverse gate current | -2.4 | mA |
| IGF | Forward gate current | 10 | mA |
| PT | Total power dissipation | 6 | W |
| Tch | Cannel temperature | 175 | °C |
| Tstg | Storage temperature | -65 to +175 | °C |
MGF0919A Features
· High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
· High power gain Gp=19dB(TYP.) @f=1.9GHz
· High power added efficiency hadd=37%(TYP.) @f=1.9GHz,Pin=12dBm
· Hermetic Package
· High power gain Gp=19dB(TYP.) @f=1.9GHz
· High power added efficiency hadd=37%(TYP.) @f=1.9GHz,Pin=12dBm
· Hermetic Package
MGF0919A Typical Application
· For UHF Band power amplifiers
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