MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:06+ D/C:TO-3P
FQH11N90C, FQH140N10, FQH18N50V2 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 06+
D/C: TO-3P
Description: MOSFET N-CH 500V 20A TO-247
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PDF/DataSheet Download
Datasheet: FQH140N10
File Size: 696289 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQH140N10
File Size: 696289 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQH18N50V2
File Size: 642640 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQH140N10 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 140A |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 70A, 10V |
| Input Capacitance (Ciss) @ Vds | 7900pF @ 25V |
| Power - Max | 375W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 285nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQH140N10 FQH140N10 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
|
Symbol |
Parameter |
FQA140N10 |
Units |
| VDSS | Drain-Source Voltage | 100 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
140 | A |
| 99 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 560 | A |
| VGSS | Gate-Source Voltage | ± 25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 1500 | mJ |
| IAR | Avalanche Current (Note 1) | 140 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 37.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 6.5 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
375 | W |
| 2.5 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +175 | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
| Technical/Catalog Information | FQH18N50V2 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 265 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 3290pF @ 25V |
| Power - Max | 277W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 55nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQH18N50V2 FQH18N50V2 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
| Symbol | Parameter |
FQH18N50V2 |
Units |
| VDSS | Drain-Source Voltage |
500 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
20 |
A |
|
12.7 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
80 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
330 |
mJ |
| IAR | Avalanche Current (Note 1) |
20 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
27.7 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
277 |
W |
|
2.22 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
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