Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 500 V
Continuous Drain Current
: 20 A
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-247
Resistance Drain-Source RDS (on)
: 0.265 Ohms
Features: • 20A, 500V, RDS(on) = 0.265Ω @VGS = 10 V
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FQH18N50V2 |
Units |
| VDSS |
Drain-Source Voltage |
500 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
20 |
A |
|
12.7 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
80 |
A |
| VGSS |
Gate-Source Voltage |
± 30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
330 |
mJ |
| IAR |
Avalanche Current (Note 1) |
20 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
27.7 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
277 |
W |
|
2.22 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese N-Channel enhancement mode power FQH18N50V2 field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology FQH18N50V2 has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. FQH18N50V2 is well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Parameters: | Technical/Catalog Information | FQH18N50V2 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 265 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 3290pF @ 25V |
| Power - Max | 277W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 55nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQH18N50V2
FQH18N50V2
|
FQH18N50V2 Data Sheet
