FQH44N10

MOSFET N-CH/100V/48A

product image

FQH44N10 Picture
SeekIC No. : 00163119 Detail

FQH44N10: MOSFET N-CH/100V/48A

floor Price/Ceiling Price

Part Number:
FQH44N10
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 48 A
Resistance Drain-Source RDS (on) : 0.039 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-247
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 48 A
Resistance Drain-Source RDS (on) : 0.039 Ohms


Features:

• 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical  85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 maximum junction temperature rating



Specifications

Symbol

Parameter

FQA140N10

Units

VDSS Drain-Source Voltage 100 V
ID Drain Current - Continuous (TC = 25)
           - Continuous (TC = 100)
48 A
34 A
IDM Drain Current - Pulsed (Note 1) 192 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 530 mJ
IAR Avalanche Current (Note 1) 48 A
EAR Repetitive Avalanche Energy (Note 1) 18 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
PD Power Dissipation (TC = 25)
      - Derate above 25
180 W
1.2 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +175  
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300  



Description

    These N-Channel enhancement mode power FQH44N10 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology FQH44N10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQH44N10 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.




Parameters:

Technical/Catalog InformationFQH44N10
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C48A
Rds On (Max) @ Id, Vgs39 mOhm @ 24A, 10V
Input Capacitance (Ciss) @ Vds 1800pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs62nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQH44N10
FQH44N10



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Line Protection, Backups
Transformers
Fans, Thermal Management
Cable Assemblies
View more