FQH90N10V2

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 105 A
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

• 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V
• Low gate charge ( typical 147 nC)
• Low Crss ( typical 300 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQH90N10V2	Units
VDSS	Drain-Source Voltage	100	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	105	A
		78	A
IDM	Drain Current - Pulsed (Note 1)	420	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	2430	mJ
IAR	Avalanche Current (Note 1)	105	A
EAR	Repetitive Avalanche Energy (Note 1)	33	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	330	W
		2.2	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power FQH90N10V2 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQH90N10V2 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQH90N10V2 is well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.