FQH35N40

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 35 A
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.105 Ohms
Drain-Source Breakdown Voltage : 400 V


Features:

• 35A, 400V, RDS(on) = 0.105Ω @VGS = 10 V
• Low gate charge ( typical 110 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQH35N40	Units
VDSS	Drain-Source Voltage	400	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	35	A
		22	A
IDM	Drain Current - Pulsed (Note 1)	140	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1600	mJ
IAR	Avalanche Current (Note 1)	35	A
EAR	Repetitive Avalanche Energy (Note 1)	31	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	310	W
		2.5	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQH35N40 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQH35N40 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQH35N40 is well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.