MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:08+
FQH90N10V2, FQH90N15, FQHA0461-01 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-3P
D/C: 08+
Description: MOSFET N-CH 150V 90A TO-247
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PDF/DataSheet Download
Datasheet: FQH90N10V2
File Size: 1042144 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQH90N15
File Size: 694841 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQH140N10
File Size: 696289 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.
| Symbol | Parameter |
FQH90N10V2 |
Units |
| VDSS | Drain-Source Voltage |
100 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
105 |
A |
|
78 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
420 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
2430 |
mJ |
| IAR | Avalanche Current (Note 1) |
105 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
33 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
330 |
W |
|
2.2 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
| Technical/Catalog Information | FQH90N15 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 90A |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 45A, 10V |
| Input Capacitance (Ciss) @ Vds | 8700pF @ 25V |
| Power - Max | 375W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 285nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQH90N15 FQH90N15 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply.
| Symbol | Parameter |
FQH90N15/FQA90N15 |
Units |
| VDSS | Drain-Source Voltage |
150 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
910
63.5 |
A
A |
| IDM | Drain Current - Pulsed (Note 1) |
360 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
1400 |
mJ |
| IAR | Avalanche Current (Note 1) |
70 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
37.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
375
2.5 |
W
W/°C |
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
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