FGP30N60S2D, FGP30N6S2, FGP50B Selling Leads, Datasheet
Package Cooled:TO-220 D/C:09+
FGP30N60S2D, FGP30N6S2, FGP50B Datasheet download
Part Number: FGP30N60S2D
MFG: --
Package Cooled: TO-220
D/C: 09+
FGP30N60S2D, FGP30N6S2, FGP50B
- Table of contents:
Info of FGP30N60S2D
Info of FGP30N6S2
Info of FGP50B
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About FGP20B
PDF/DataSheet Download
Datasheet: FGP20B
File Size: 273123 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About FGP30N6S2
PDF/DataSheet Download
Datasheet: FGP30N6S2
File Size: 182223 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FGP20B
PDF/DataSheet Download
Datasheet: FGP20B
File Size: 273123 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
FGP30N6S2 General Description
The FGP30N6S2 is Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are specially designed for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.SMPS II LGC devices are widely used in the fields of Power Factor Correction (PFC) circuits,full bridge topologies,half bridge topologies,push-Pull circuits,uninterruptible power supplies and zero voltage and zero current switching circuits.
Here you can get some information about the features. The 100kHz operation is at 390V, 14A.The 200kHZ operation is at 390V,9A.Besides,it has 600V switching SOA capability.The typical fall time is 90ns at TJ = 125oC.The low gate charge is 23 nC at VGE = 15V.The low plateau voltage is 6.5V typical.The UIS rated is 150mJ.What's more,it has low conduction loss.
You have to understand the maximum ratings at TC= 25 if you want to purchase the product.The BVCES (Collector to Emitter Breakdown Voltage) is 600 V.The IC25 (Collector Current Continuous,TC = 25) is 45 A.The IC110 (Collector Current Continuous,TC = 110) is 20 A.The ICM (Collector Current Pulsed) is 108 A.The VGES (Gate to Emitter Voltage Continuous) is ±20 V.The VGEM (Gate to Emitter Voltage Pulsed) is ±30 V.The SSOA (Switching Safe Operating Area at TJ = 150) is 60A at 600V.The EAS (Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V) is 150 mJ.The PD (Power Dissipation Total TC = 25°C) is 167 W.The Power Dissipation Derating is 1.33 W/ at TC > 25.The TJ (Operating Junction Temperature Range) is from -55 to 150 .The TSTG (Storage Junction Temperature Range) is from -55 to 150 .
The following is about the electrical characteristics at TJ = 25.The Minimum BVCES (Collector to Emitter Breakdown Voltage) is 600 V at IC = 250A, VGE = 0.The Min BVECS (Emitter to Collector Breakdown Voltage) is 10 V and the Max. is 25 V at IC = 10mA, VGE = 0.The Max. ICES (Collector to Emitter Leakage Current) is 100 A at VCE = 600V,TJ = 25 and 2 mA at VCE = 600V,TJ = 125.The Max IGES (Gate to Emitter Leakage Current) is ±250 nA at VGE = ± 20V.The Typical VCE(SAT) (Collector to Emitter Saturation Voltage) is 2.0 V and the Max is 2.5V at IC = 12A,VGE = 15V,TJ = 25.The Typical VCE(SAT) (Collector to Emitter Saturation Voltage) is 1.7 V and the Max is 2.0 V at IC = 12A,VGE = 15V,TJ = 125.
FGP30N6S2 Maximum Ratings
FGP30N6S2 Features
FGP50B General Description
FGP50B thru FGP50D datasheet
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