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This N-Channel IGBT is a MOS gated, logic level device hich has been especially tailored for camera flash applications here board space is a premium. These devices have een designed to offer exceptional power dissipation in a ery small footprint for applications where bigger, more expensive ackages are impractical. The gate is ESD protected ith a zener diode.
FGR15N40A Maximum Ratings
Symbol
Description
FGA25N120AND
Units
BVCES
Collector to Emitter Breakdown Voltage
400
V
IC
Collector Current Continuous(DC)
8
A
ICP
Collector Current Pulsed(100s)
150
A
VGES
Gate to Emitter Voltage Continuous(DC)
±6
V
VGEP
Gate to Emitter Voltage Pulsed
±8
V
PD
Power Dissipation Total TC = 25°C
1.25
W
TJ
Operating Junction Temperature Range
-40 to 150
°C
TSTG
Storage Junction Temperature Range
-40 to 150
°C
ESD
Electrostatic Discharge Voltage at 100pF, 1500
2
kV
FGR15N40A Features
` VCE(SAT) = 4.4V at IC=150A ` tfl = 1.1s, td(OFF)I = 0.46s ` 2kV ESD Protected ` High Peak Current Density ` SuperSOT - 8 package, small footprint, low profile 1mm thick)