Features: • High Current Capability• Low saturation voltage : VCE(sat) = 1.1 V @ IC = 20A• High input impedance• Fast switchingApplicationPDP SystemSpecifications Symbol Description FGP90N30 Units VCES Collector-Emitter Voltage 300 V VGES Gate-Emitter Volt...
FGP90N30: Features: • High Current Capability• Low saturation voltage : VCE(sat) = 1.1 V @ IC = 20A• High input impedance• Fast switchingApplicationPDP SystemSpecifications Symbol...
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Symbol | Description | FGP90N30 | Units |
VCES | Collector-Emitter Voltage | 300 | V |
VGES | Gate-Emitter Voltage | ± 20 | V |
IC | Collector Current @ TC = 25°C | 90 | A |
IC_pulse (1) | Pulse Collector Current @ TC = 25°C | 130 | A |
PD | Maximum Power Dissipation @ TC = 25°C | 192 | W |
Maximum Power Dissipation @ TC = 100°C | 77 | W | |
TJ | Operating Junction Temperature | -55 to +150 | °C |
TSTG | Storage Temperature Range | -55 to +150 | °C |
TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 | °C |